GeCsO3 is a mixed-metal oxide semiconductor combining germanium and cesium in a ternary compound structure. This is primarily a research-phase material studied for optoelectronic and photocatalytic applications, rather than an established industrial commodity. The material represents exploration within the broader family of metal oxides for next-generation semiconductors, with potential interest in photovoltaic devices, UV detection, or photocatalytic water treatment—though practical engineering applications remain limited pending demonstration of scalable synthesis and performance advantages over more mature alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.4890 | eV | DFT · PBE | ||
| ↳ | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | -1.696e-8 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -1.547 | eV/atom | DFT | ||
| ↳ | 1.980 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data