GeBiN3

ceramic

· GeBiN3

GeBiN3 is an experimental ternary ceramic compound combining germanium, bismuth, and nitrogen, representing a research-phase material in the wide-bandgap semiconductor and advanced ceramics family. While not yet established in mainstream industrial production, this material class is being investigated for potential applications requiring high thermal stability, radiation resistance, or wide-bandgap electronic properties—characteristics valuable in extreme-environment electronics and next-generation semiconductor devices. Its novelty means performance data and manufacturing scalability remain active research topics, making it relevant primarily for materials scientists and engineers developing advanced or specialized systems.

wide-bandgap semiconductorsradiation-hardened electronicshigh-temperature ceramicsexperimental optoelectronicsadvanced aerospace materials

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	2.029	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GeBiN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental