GeBi2Te4 is a layered chalcogenide ceramic compound belonging to the family of bismuth telluride-based materials, which are primarily investigated as thermoelectric and phase-change materials. This material is of significant research interest for applications requiring thermal management or information storage, as layered chalcogenides exhibit tunable electronic and thermal properties that make them candidates for next-generation energy conversion and memory devices. While not yet mainstream in commercial engineering, GeBi2Te4 represents the broader potential of bismuth telluride derivatives to outperform conventional thermoelectrics or enable reversible phase-change behavior in demanding thermal or electronic applications.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Exfoliation Energy(Eexf) | 53.75 | meV/atom | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.123 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6100 | eV | DFT · OptB88vdW | ||
Electron Effective Mass(m*e) | 0.2800 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.6067 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00607 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00398 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -250 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 249.5 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00750 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.1946 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data