GeAsN3

ceramic

· GeAsN3

GeAsN3 is an experimental ternary ceramic compound combining germanium, arsenic, and nitrogen in a nitride-based system. This material belongs to the family of wide-bandgap semiconductors and ceramics, with research interest primarily driven by its potential for high-temperature, high-power, or optoelectronic applications where conventional semiconductors reach performance limits. While not yet commercialized at scale, materials in this compositional space are investigated for their thermal stability, electrical properties, and chemical resistance in extreme environments.

high-temperature semiconductorswide-bandgap electronics researchoptoelectronic device developmentextreme environment coatingsadvanced ceramic compositeslaboratory/research applications

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.4148	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.640	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GeAsN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental