Ge8As8Se8 is a chalcogenide glass semiconductor composed of germanium, arsenic, and selenium in near-equiatomic proportions. This material belongs to the family of amorphous chalcogenide semiconductors, which are primarily of research and specialized industrial interest rather than high-volume commercial use. Chalcogenide glasses like this composition are investigated for infrared optics, nonlinear photonics, and phase-change memory applications due to their transparency in the mid- to far-infrared spectrum and switchable electronic properties, though they remain less common than their binary counterparts (such as GeSe or As2Se3) in established manufacturing.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.320 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1530 | eV/atom | — |