Ge8 is a germanium-based semiconductor compound, likely a germanium cluster or polymorph with potential applications in advanced optoelectronic and thermoelectric devices. This material represents research-level development rather than a widely commercialized product; germanium semiconductors are valued for their narrow bandgap and high carrier mobility, making them candidates for infrared detectors, high-speed electronics, and next-generation solar cells where they can outperform silicon in specialized roles.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00190 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.1390 | eV/atom | — |