Ge4 Pb8 S16

semiconductor

· Ge4 Pb8 S16

Ge₄Pb₈S₁₆ is a mixed-metal chalcogenide semiconductor compound combining germanium, lead, and sulfur in a complex stoichiometric ratio. This material belongs to the family of IV-VI and IV-IV-VI semiconductors, which are of significant research interest for infrared (IR) photonics and thermoelectric applications due to their narrow bandgaps and high carrier mobility. While primarily studied in research settings rather than established in high-volume industrial production, compounds in this material family show promise for next-generation infrared detectors, thermal imaging, and waste-heat energy conversion systems where conventional semiconductors are limited by bandgap constraints.

infrared detectors and sensorsthermal imaging systemsthermoelectric power generationphotonic devicesresearch and development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.973	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5370	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ge4 Pb8 S16

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control