Ge4Os2 is an intermetallic semiconductor compound combining germanium and osmium, representing a research-phase material in the transition metal-germanide family. This compound is primarily of scientific interest for exploring electronic and structural properties in high-performance semiconductor systems, with potential applications where the combination of osmium's density and stability with germanium's semiconducting characteristics offers advantages over conventional alternatives. The material remains largely in experimental development stages; its viability for industrial applications depends on synthesis scalability, thermal stability, and cost-effectiveness compared to established semiconductor technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 157.1 | GPa | — | ||
Shear Modulus(G) | 100.1 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00720 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.05000 | eV/atom | — |