Ge4 N4 O2

semiconductor

· Ge4 N4 O2

Ge4N4O2 is an oxynitride ceramic compound combining germanium, nitrogen, and oxygen—a mixed-anion system that bridges conventional nitride and oxide ceramics. This material belongs to the broader family of quaternary semiconducting ceramics and remains largely in the research phase, with potential applications emerging in high-temperature electronics, optoelectronics, and advanced refractories where the oxynitride structure offers tunable band gaps and thermal stability superior to single-anion alternatives.

high-temperature semiconductorsoptoelectronic researchadvanced refractorieswide-bandgap electronicsexperimental ceramicsthermal barrier coatings

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	99.32	GPa	—
Shear Modulus(G)	61.29	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.363	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5170	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ge4 N4 O2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control