Ge₄Mo₂O₁₂ is a mixed-metal oxide semiconductor compound combining germanium and molybdenum oxides in a defined stoichiometric ratio. This material belongs to the family of polyoxometalates and metal oxide semiconductors, primarily investigated in research contexts for photocatalytic and optoelectronic applications due to the complementary properties of its constituent metal oxides. Industrial adoption remains limited, but the material shows promise as a photocatalyst for environmental remediation and as an active component in advanced electronic devices where the bandgap engineering provided by germanium-molybdenum oxide combinations offers advantages over single-component alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00970 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.679 | eV/atom | — |