Ge3As4 is a quaternary chalcogenide ceramic compound combining germanium and arsenic, belonging to the family of amorphous or crystalline semiconducting ceramics studied for infrared and photonic applications. This material is primarily of research and specialized industrial interest rather than commodity use, valued in infrared optics, thermal imaging windows, and photonic device fabrication where its optical transparency in the mid- to far-infrared spectrum and chemical stability are advantageous. Engineers select Ge3As4-based compositions over simpler binary chalcogenides when broadband IR transmission, environmental durability, or specific refractive index tuning is required in demanding optical systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 49.40 | GPa | — | ||
Poisson's Ratio(ν) | 0.2500 | - | — | ||
Shear Modulus(G) | 29.70 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.109 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1920 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 24.01 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.2755 | C/m² | — | ||
| ↳ | 0.05459 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.05290 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.00991 | eV/atom | — |