Ge3O6 is a germanium oxide semiconductor compound belonging to the family of metal oxides with potential applications in electronic and photonic devices. This material is primarily of research and development interest rather than established in high-volume industrial production, with potential applications in optoelectronics, sensing, and advanced semiconductor device architectures where germanium's favorable band gap and carrier mobility characteristics can be leveraged. Engineers would consider this compound for next-generation devices requiring integration of germanium-based semiconductors with oxide functionality, such as heterojunction structures or transparent conducting films in specialized applications.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 42.48 | GPa | — | ||
Shear Modulus(G) | 25.65 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.245 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.677 | eV/atom | — |