Ge3 As4

semiconductor

· Ge3 As4

Ge3As4 is a III-V compound semiconductor belonging to the arsenide family, composed of germanium and arsenic elements. This material is primarily of research interest for optoelectronic and photonic applications, particularly in infrared detection and sensing systems where its bandgap and carrier properties offer potential advantages over conventional semiconductors. While not yet widely commercialized, Ge3As4 represents an emerging compound in the broader family of germanium-based semiconductors being explored for next-generation detectors, modulators, and integrated photonic devices that require performance in specific spectral windows.

infrared detectorsphotonic integrated circuitsresearch semiconductorsoptoelectronic sensorscompound semiconductor developmentadvanced optical devices

Compliance & Regulations

?ITAR?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	49.40	GPa	—
Shear Modulus(G)	29.70	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.06800	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.01000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

Quality & Standards

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ge3 As4

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control

Quality & Standards