Ge2Sb2Te5 is a chalcogenide compound belonging to the phase-change materials (PCM) family, characterized by rapid and reversible transitions between crystalline and amorphous states triggered by thermal or electrical stimuli. This material is the archetypal composition used in rewritable optical media (DVDs, Blu-rays) and is increasingly explored for next-generation non-volatile memory devices, thermal imaging, and neuromorphic computing applications where the ability to switch between distinct physical states is exploited for information storage and processing.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 22.66 | GPa | — | ||
Shear Modulus(G) | 13.02 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.050 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.5000 | eV | — | ||
| ↳ | 0.04100 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -145.1 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.02240 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.09939 | eV/atom | — |