Ge2As

ceramic

· JVASP-135646· Ge2As

Ge₂As is a binary ceramic compound composed of germanium and arsenic, belonging to the family of IV-V semiconducting ceramics. This material is primarily investigated in research contexts for its potential in optoelectronic and photonic applications, where its bandgap and refractive properties may enable infrared transmitting windows or sensing devices. Compared to more established III-V semiconductors, germanium-arsenic compounds offer alternative lattice parameters and thermal characteristics that make them candidates for specialized infrared optics and narrow-bandgap semiconductor research.

infrared optics and windowssemiconductor researchphotonic devicesoptoelectronic componentsexperimental materials science

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	5.962	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.1904	eV/atom	—
Formation Energy(ΔHf)	0.1570	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ge2As

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental