Ge2Te5As2 is a chalcogenide glass—a amorphous semiconductor composed of germanium, tellurium, and arsenic—belonging to the family of materials used for infrared optics and phase-change applications. This composition sits in an active research space for infrared window materials, optical recording media, and potential thermal imaging components, where its infrared transparency and variable refractive index offer advantages over conventional glasses and crystalline alternatives in the mid-to-far IR spectrum. The arsenic addition modulates glass-forming tendencies and thermal stability compared to simpler Ge-Te binaries, making it relevant for specialized optoelectronic and photonic device engineering.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01460 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.04400 | eV/atom | — |