Ge2 Sb2 Te5

semiconductor

· Ge2 Sb2 Te5

Ge₂Sb₂Te₅ (GST) is a chalcogenide phase-change material that undergoes rapid, reversible transitions between crystalline and amorphous states when heated or cooled, enabling data storage through optical or electrical property changes. It is the baseline composition in commercial phase-change memory (PCM) devices and optical rewritable media, chosen for its fast crystallization kinetics, good thermal stability, and compatibility with standard semiconductor manufacturing. Compared to alternatives, GST balances switching speed, endurance cycling, and manufacturability, making it the reference standard for next-generation nonvolatile memory technologies beyond conventional flash storage.

phase-change memory (PCM)rewritable optical medianonvolatile storage devicesneuromorphic computingthermal switching applicationsreconfigurable photonic circuits

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00210	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.09900	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ge2 Sb2 Te5

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control