Ge2 is a germanium-based semiconductor compound belonging to the Group IV elemental semiconductor family. While the exact composition requires clarification, germanium semiconductors are valued in optoelectronic and high-frequency applications where their direct bandgap and high charge carrier mobility provide advantages over silicon in specific wavelength ranges and radiation environments. This material represents specialized semiconductor engineering relevant to infrared detection, space electronics, and high-speed integrated circuits where performance in extreme conditions or specific spectral windows justifies the higher cost relative to conventional silicon alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 58.07 | GPa | — | ||
Shear Modulus(G) | 43.96 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01280 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.000 | eV/atom | — |