Ge12 is a germanium-based semiconductor compound, likely a germanium alloy or doped germanium variant used in specialized electronic and optoelectronic applications. The material belongs to the Group IV semiconductor family and is valued for its intermediate bandgap properties and carrier mobility characteristics, making it relevant for infrared detection, thermal imaging, and high-frequency switching applications where germanium's thermal stability and response characteristics provide advantages over silicon or other alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 53.18 | GPa | — | ||
Shear Modulus(G) | 42.99 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1509 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.1380 | eV/atom | — |