Ge1 Te1
semiconductorGeTe (germanium telluride) is a binary semiconductor compound belonging to the IV-VI chalcogenide family, known for its narrow bandgap and strong light-matter interactions. This material is primarily investigated for phase-change memory applications, infrared optics, and thermoelectric devices, where its ability to rapidly switch between crystalline and amorphous states makes it valuable for non-volatile data storage. Engineers select GeTe-based systems over alternatives like GST alloys when thermal stability, infrared transparency, or specific thermoelectric performance is prioritized, though the pure binary compound is often modified with dopants or alloying elements (such as Sb or Bi) to optimize switching speeds and thermal properties for practical device integration.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |