Ge1 Se4 Zn2
semiconductorGe1Se4Zn2 is a quaternary chalcogenide semiconductor compound combining germanium, selenium, and zinc elements. This material belongs to the family of glassy and crystalline chalcogenide semiconductors, which are primarily explored in research and emerging technology contexts rather than established commercial production. Chalcogenide semiconductors like this composition are investigated for infrared optics, phase-change memory devices, and non-linear optical applications due to their wide transparency windows in the infrared spectrum and tunable electronic properties; the zinc doping modifies the bandgap and mechanical behavior compared to binary Ge-Se systems, making it relevant for next-generation photonic and memory device engineering.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |