Ge1 Sb4 Te7

semiconductor

· Ge1 Sb4 Te7

Ge₁Sb₄Te₇ is a chalcogenide-based phase-change material (PCM) belonging to the GST (germanium-antimony-tellurium) family, widely studied for electronic and photonic applications. This composition is particularly notable in non-volatile memory devices and optical data storage, where it exploits rapid, reversible switching between crystalline and amorphous states triggered by thermal or electrical pulses. It is preferred in some memory architectures over conventional GST alloys due to its tailored thermal stability and crystallization kinetics, making it relevant for engineers designing phase-change memory (PCM) cells, optical recording media, and emerging neuromorphic computing systems.

Phase-change memory (PCM) cellsOptical data storage mediaNon-volatile memory devicesNeuromorphic computingRewritable optical discsThermal switching applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	34.66	GPa	—
Shear Modulus(G)	24.39	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.02740	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.1260	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ge1 Sb4 Te7

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control