Ge1 I2
semiconductorGermanium iodide (GeI₂) is a binary semiconductor compound combining germanium and iodine, belonging to the family of IV-VI and related chalcogenide semiconductors. This material is primarily of research interest for optoelectronic and photovoltaic applications, as semiconductors in this family have demonstrated potential for infrared detection, X-ray imaging, and emerging perovskite-alternative solar cell architectures. GeI₂ represents an exploratory material system where the layered crystal structure and tunable bandgap could offer advantages over more conventional semiconductors in niche sensing and energy conversion roles, though it remains less commercially established than silicon, gallium arsenide, or lead halide perovskites.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |