Ge1 B1 O3

semiconductor

· Ge1 B1 O3

GeBO₃ is an experimental semiconductor compound in the germanium borate family, combining germanium and boron oxide constituents to form a ternary oxide system. This material exists primarily in research contexts exploring wide-bandgap semiconductors and optical materials, with potential applications in UV detection, high-temperature electronics, and photonic devices where conventional semiconductors reach their limits. GeBO₃ represents an emerging area in compound semiconductors, offering the possibility of tailored electronic and optical properties through the germanium-boron-oxygen phase space, though industrial adoption remains limited pending further development and property characterization.

UV photodetectorsHigh-temperature semiconductor researchOptical waveguidesWide-bandgap electronicsPhotonic device materialsTernary oxide semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00120	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.7570	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ge1 B1 O3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control