Ge1 As1

semiconductor

· Ge1 As1

GeAs (germanium arsenide) is a III-V compound semiconductor formed from germanium and arsenic, belonging to the family of binary semiconductors used in optoelectronic and high-frequency electronic applications. While less common than GaAs or InP in commercial production, GeAs is primarily of research and developmental interest for its potential in infrared detectors, thermal imaging systems, and high-speed transistor applications where its band structure and carrier transport properties may offer advantages. The material represents an alternative within the III-V semiconductor family where composition engineering enables tuning of electronic and optical properties for specialized device applications.

infrared detectorsthermal imaging sensorshigh-frequency transistorsoptoelectronic researchcompound semiconductor devicesphotovoltaic research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	63.70	GPa	—
Shear Modulus(G)	42.44	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00110	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.05900	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ge1 As1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control