Ge0.93Si0.07
semiconductor· Ge0.93Si0.07
Ge0.93Si0.07 is a germanium-silicon alloy semiconductor engineered with a high germanium content and minimal silicon doping, forming part of the SiGe heterojunction material family. This composition is primarily investigated in research and specialized high-performance applications where direct bandgap properties and high carrier mobility of germanium are leveraged while maintaining some lattice compatibility benefits from silicon integration. The material bridges between pure germanium (used in infrared and high-frequency devices) and silicon-based CMOS technology, making it relevant for next-generation optoelectronic and RF device development where performance beyond conventional silicon is required.
infrared photodetectorshigh-frequency RF transistorsheterojunction optoelectronic devicesadvanced semiconductor researchsilicon photonics integrationdetector arrays
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.