Ge0.9355Si0.0645

Ge0.9355Si0.0645 is a germanium-silicon alloy with a composition heavily weighted toward germanium (~93.6 at.%) and a small silicon dopant (~6.4 at.%). This material belongs to the group IV semiconductor family and represents a tuned variant of the Ge-Si system, engineered to modify bandgap, lattice constant, or carrier mobility relative to pure germanium. Ge-Si alloys of this composition are primarily investigated in advanced optoelectronics, infrared detectors, and high-frequency devices where the intermediate properties between bulk Ge and Si offer performance advantages unavailable from either parent material alone. The silicon alloying reduces defect density and improves thermal stability compared to pure Ge, making it valuable for research into heterostructures, focal plane arrays, and next-generation photovoltaic or terahertz applications.