Ge0.88Si0.12 — Properties & Data | MatWorld

Ge0.88Si0.12

Name: Ge0.88Si0.12
Brand: MatWorld

semiconductor

· Ge0.88Si0.12

Ge₀.₈₈Si₀.₁₂ is a germanium-silicon alloy semiconductor in the SiGe material system, engineered to combine silicon's process compatibility with germanium's superior carrier mobility. This composition sits within the range used in advanced heterojunction bipolar transistors (HBTs) and high-speed mixed-signal integrated circuits, where the controlled Ge fraction provides a tuned bandgap and enhanced hole mobility compared to pure silicon, while remaining compatible with mainstream silicon fabrication infrastructure.

RF/microwave integrated circuitsHigh-speed analog amplifiersHeterojunction bipolar transistorsTerahertz communicationsLow-noise high-gain amplifiers

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.8400	eV	Measured

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ge0.88Si0.12

Electrical Properties

Regulatory Screening

Environmental

Export Control