Ge0.6Si0.4

semiconductor

· Ge0.6Si0.4

Ge0.6Si0.4 is a silicon-germanium alloy semiconductor composed of 60% germanium and 40% silicon, engineered to tune the bandgap and lattice properties between pure silicon and germanium. This material is primarily used in high-speed optoelectronic and photonic integrated circuits, infrared detectors, and advanced transistor technologies where the intermediate bandgap and carrier mobility of the alloy outperform either constituent alone. Compared to bulk silicon, Ge0.6Si0.4 offers faster carrier transport and sensitivity to longer wavelengths; it is particularly valuable in heterojunction bipolar transistors (HBTs), photodiodes for telecommunications, and emerging integrated photonics, though lattice-mismatch engineering and thermal management during growth remain design considerations.

high-speed integrated circuitsinfrared photodetectorsoptoelectronic transceiversheterojunction bipolar transistorssilicon photonicstelecommunications wavelength detection

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.9000	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ge0.6Si0.4

Electrical Properties

Regulatory Screening

Environmental

Export Control