Ge0.3Si0.7
semiconductor· Ge0.3Si0.7
Ge0.3Si0.7 is a germanium-silicon alloy semiconductor with a 30% germanium and 70% silicon composition, belonging to the SiGe alloy family widely studied for advanced electronic and photonic applications. This material is primarily used in high-speed integrated circuits, heterojunction bipolar transistors (HBTs), and infrared detectors, where its bandgap and lattice properties offer advantages over pure silicon in terms of carrier mobility and optical response. The alloy is notable for enabling improved performance in rf/microwave devices and thermal imaging systems compared to conventional silicon, making it particularly valuable in applications requiring either speed or wavelength-specific sensitivity.
RF and microwave integrated circuitsHeterojunction bipolar transistorsInfrared photodetectorsHigh-speed optoelectronicsThermal imaging sensorsAdvanced semiconductor devices
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.