Ge0.1Pb0.9Se0.9S0.1

semiconductor

· Ge0.1Pb0.9Se0.9S0.1

Ge0.1Pb0.9Se0.9S0.1 is a quaternary chalcogenide semiconductor alloy combining lead selenide and lead sulfide with germanium and sulfur doping. This material belongs to the narrow-bandgap semiconductor family and is primarily investigated for infrared detection and thermal imaging applications, where its composition is engineered to achieve specific wavelength sensitivity in the mid- to long-wave infrared spectrum. The lead selenide-sulfide system is well-established for IR detectors, and the germanium-sulfur modifications enable tuning of optical and thermal properties for specialized sensing applications.

infrared detectorsthermal imaging sensorsradiation detectionresearch semiconductorsnarrow-bandgap optoelectronicsremote sensing devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3200	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ge0.1Pb0.9Se0.9S0.1

Electrical Properties

Regulatory Screening

Environmental

Export Control