Ge0.06Te0.06Pb0.94Se0.94

semiconductor

· Ge0.06Te0.06Pb0.94Se0.94

This is a quaternary chalcogenide semiconductor alloy combining lead selenide (PbSe) with germanium and tellurium dopants, belonging to the IV-VI narrow bandgap semiconductor family. Compositions in this system are primarily of research interest for infrared (IR) detection and thermoelectric applications, where the tunable bandgap and carrier concentration from alloying enable optimization for mid-wave to long-wave IR sensing or waste heat recovery. PbSe-based alloys are notable alternatives to traditional IR detectors and thermoelectrics because the narrow bandgap and high carrier mobility support room-temperature or minimally-cooled operation in applications where competing materials require substantial thermal management.

infrared detection and thermal imagingthermoelectric power generationradiation sensingresearch optoelectronicsnarrow-bandgap semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2800	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ge0.06Te0.06Pb0.94Se0.94

Electrical Properties

Regulatory Screening

Environmental

Export Control