Gd₁Mn₁.₉₅In₁.₀₅S₅ is a ternary chalcogenide semiconductor compound combining rare-earth (gadolinium), transition-metal (manganese), and p-block (indium) elements in a sulfide matrix. This is a research-stage material studied for its potential in spintronic and magnetoelectric applications, where the interplay between magnetic manganese sites and the semiconductor bandstructure offers opportunities for coupled magnetic and electronic transport. While not yet commercialized at scale, materials in this family are investigated for next-generation devices requiring integrated magnetic and semiconducting functionality.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.660 | eV | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data