Gd1Mn1.95In1.05S5

semiconductor

· Gd1Mn1.95In1.05S5

Gd₁Mn₁.₉₅In₁.₀₅S₅ is a ternary chalcogenide semiconductor compound combining rare-earth (gadolinium), transition-metal (manganese), and p-block (indium) elements in a sulfide matrix. This is a research-stage material studied for its potential in spintronic and magnetoelectric applications, where the interplay between magnetic manganese sites and the semiconductor bandstructure offers opportunities for coupled magnetic and electronic transport. While not yet commercialized at scale, materials in this family are investigated for next-generation devices requiring integrated magnetic and semiconducting functionality.

experimental magnetoelectric devicesspintronics researchmagnetic semiconductor heterostructuressolid-state magnetic sensingthermoelectric-magnetic hybridsquantum material research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.660	eV	—

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Regulatory Screening

Environmental

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Gd1Mn1.95In1.05S5

Electrical Properties

Regulatory Screening

Environmental

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