Gd(InS2)3

semiconductor

· Gd(InS2)3

Gd(InS2)3 is a ternary semiconductor compound composed of gadolinium, indium, and sulfur, belonging to the family of rare-earth metal chalcogenides. This material is primarily a research-phase compound studied for its potential optoelectronic and photovoltaic properties, leveraging the band-gap engineering capabilities of rare-earth–transition-metal sulfides. While not yet widely deployed in mainstream commercial applications, materials in this class are investigated for next-generation solar cells, infrared detectors, and quantum devices where the rare-earth dopant can provide unique electronic and magnetic functionality beyond conventional III–VI semiconductors.

photovoltaic researchinfrared detectionoptoelectronic devicesrare-earth semiconductorsband-gap engineeringquantum materials research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.130	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Gd(InS2)3

Electrical Properties

Regulatory Screening

Environmental

Export Control