GaZnO₂S is a quaternary ceramic compound combining gallium, zinc, oxygen, and sulfur—a research-phase material belonging to the family of mixed-anion semiconductors and wide-bandgap ceramics. This composition sits at the intersection of oxide and sulfide chemistry, making it of primary interest in optoelectronic and photocatalytic applications where tunable bandgap and enhanced light absorption are valuable. While not yet established in high-volume production, materials in this family are explored for next-generation photovoltaics, water-splitting photocatalysts, and visible-light-active semiconductors where conventional single-anion compounds (e.g., GaAs or ZnO) show limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 2.097 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.580 | eV/atom | — |