GaZnN3 — Properties & Data | MatWorld

GaZnN3

ceramic

· GaZnN3

GaZnN3 is a ternary nitride ceramic compound combining gallium, zinc, and nitrogen, representing an emerging material in the wide-bandgap semiconductor and advanced ceramic family. This composition is primarily of research interest for optoelectronic and high-temperature applications, where it bridges properties between conventional GaN (gallium nitride) and zinc nitride systems; potential advantages include tuned bandgap engineering and enhanced performance in UV emission or power electronics, though industrial adoption remains limited pending further development and cost optimization.

UV light emittersWide-bandgap semiconductorsHigh-temperature electronicsResearch and developmentPower semiconductor devicesOptoelectronic components

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	3.895	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.300	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaZnN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental