GaTlON2 — Properties & Data | MatWorld

GaTlON2

ceramic

· GaTlON2

GaTlON2 is an experimental compound ceramic combining gallium, thallium, and nitrogen—likely a ternary nitride or oxynitride material in the semiconductor or advanced ceramic family. This composition represents research-level development rather than an established commercial material; such compounds are typically investigated for optoelectronic, photovoltaic, or wide-bandgap semiconductor applications where the combination of elements may offer tunable electronic properties or thermal stability advantages over binary nitrides like GaN.

wide-bandgap semiconductors (research phase)optoelectronic devices (exploratory)high-temperature ceramics (potential)photovoltaic researchmaterials development/academic research

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Filter by

Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	0.000533	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.360	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaTlON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental