GaTlO2S is a mixed-metal oxide-sulfide ceramic compound containing gallium, thallium, oxygen, and sulfur. This is a specialized research compound that combines optical and semiconducting properties typical of gallium-based ceramics with the potential electrochemical characteristics introduced by thallium and sulfur incorporation. Such materials are typically investigated for applications requiring tailored band gaps, photocatalytic activity, or specific optical responses in specialized optoelectronic or energy conversion contexts.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | -0.000225 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.220 | eV/atom | — |