GaTlO2N

ceramic

· GaTlO2N

GaTlO2N is an experimental oxynitride ceramic compound containing gallium, thallium, oxygen, and nitrogen. This material belongs to the family of mixed-anion ceramics being investigated for advanced functional applications where conventional oxides or nitrides are insufficient. Research interest in this composition stems from the potential to engineer bandgap properties, thermal stability, and electronic/ionic conductivity by combining multiple anion types—a strategy particularly relevant for next-generation energy storage, photocatalysis, and wide-bandgap semiconductor applications.

photocatalytic materials (research stage)wide-bandgap semiconductorssolid-state battery electrolytes (exploratory)optoelectronic devices (experimental)high-temperature ceramic composites

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	2.557	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.960	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaTlO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental