GaTlN3

ceramic

· GaTlN3

GaTlN3 is a ternary nitride ceramic composed of gallium, thallium, and nitrogen, belonging to the wide-bandgap semiconductor and ceramic material family. This is primarily a research and development compound rather than an established commercial material; it is investigated for potential optoelectronic and high-temperature applications leveraging the properties of gallium nitride (GaN) combined with thallium doping or alloying effects. The material family shows promise in advanced semiconductor devices and thermal management applications where enhanced electronic properties or thermal stability are required, though practical engineering adoption remains limited pending further material characterization and scalability.

wide-bandgap semiconductorshigh-temperature optoelectronicsresearch-phase materialadvanced ceramics developmentsemiconductor doping systems

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	4.444	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaTlN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental