GaTaON2

semiconductor

· GaTaON2

GaTaON2 is an experimental ternary oxynitride semiconductor compound combining gallium, tantalum, oxygen, and nitrogen in a single crystal phase. This material belongs to the emerging class of mixed-anion semiconductors being researched for advanced photocatalytic and optoelectronic applications where wider bandgaps and tunable electronic properties are advantageous over conventional binary nitrides or oxides. Notable for its potential to split water under visible light and enable high-efficiency photocatalysis, GaTaON2 remains largely in the research phase but represents a promising direction in materials development for renewable energy and environmental remediation technologies.

photocatalytic water splittingvisible-light photocatalysisenvironmental remediationnext-generation semiconductorsresearch and development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.6000	eV	—
Magnetic Moment(μB)	0.0000234	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.5000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaTaON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control