GaTaOFN

semiconductor

· GaTaOFN

GaTaOFN is an experimental oxynitride semiconductor compound combining gallium, tantalum, oxygen, and nitrogen elements, belonging to the family of wide-bandgap semiconductors being explored for next-generation optoelectronic and power device applications. This material exists primarily in research contexts as scientists investigate its potential for visible-light photocatalysis, UV detection, and high-temperature electronic applications where conventional semiconductors reach performance limits. The oxynitride composition offers a tunable electronic structure between oxide and nitride counterparts, making it of interest for tailored optical and electrical properties in emerging device architectures.

photocatalytic water splittingUV photodetectorswide-bandgap semiconductor researchhigh-temperature electronicsenvironmental remediation devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3000	eV	—
Magnetic Moment(μB)	3.187e-16	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.4600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaTaOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control