GaSnOFN

ceramic

· GaSnOFN

GaSnOFN is an experimental ceramic compound combining gallium, tin, oxygen, and fluorine/nitrogen elements, likely developed for optoelectronic or semiconductor applications where multi-element oxide/nitride systems offer tunable bandgap and thermal properties. This material family remains primarily in research and development phases, with potential applications in thin-film photovoltaics, wide-bandgap semiconductors, or transparent conductive coatings where conventional binary oxides (like SnO₂ or Ga₂O₃) have limitations. Engineers considering this material should note it is not yet established in mainstream production, making it most relevant for advanced research projects, proof-of-concept devices, or applications requiring custom material properties unavailable from commercial alternatives.

experimental semiconductorswide-bandgap devicesthin-film photovoltaicstransparent electronicsresearch optoelectronicscustom oxide/nitride coatings

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.9619	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.8800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaSnOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental