GaSnO3 is an experimental mixed-metal oxide ceramic composed of gallium, tin, and oxygen. This compound belongs to the family of complex metal oxides under investigation for advanced electronic and optoelectronic applications, particularly in emerging research exploring wide-bandgap semiconductors and transparent conductive oxides. While not yet commercially established, materials in this compositional space are being studied for potential use in next-generation devices where conventional oxides (such as ITO or gallium oxide) face performance or cost limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | -0.2613 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -1.166 | eV/atom | — | ||
| ↳ | 0.6000 | eV/atom | — |