GaSiO₂S is an experimental mixed-anion ceramic compound combining gallium, silicon, oxygen, and sulfur elements, representing a quaternary oxysulfide material class. This composition sits at the intersection of traditional silicate ceramics and sulfide semiconductors, making it primarily a research-phase material rather than an established industrial ceramic. The material family shows potential for photocatalytic applications, optical devices, and wide-bandgap semiconductor functions where the combination of oxygen and sulfide anions could enable tuned electronic and optical properties unavailable in conventional oxides or sulfides alone.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000975 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.080 | eV/atom | — |