GaSiN3

ceramic

· GaSiN3

GaSiN₃ is an advanced ceramic compound combining gallium, silicon, and nitrogen, representing a material in the wide-bandgap semiconductor and nitride ceramic family. This compound is primarily of research and development interest, explored for high-temperature structural applications and potential optoelectronic or power device uses where gallium nitride (GaN) and silicon nitride (Si₃N₄) properties intersect. Engineers evaluating this material should note it remains largely experimental; its adoption would depend on demonstrated advantages in thermal stability, electrical properties, or mechanical performance compared to established GaN or Si₃N₄ alternatives.

high-temperature ceramics (research)wide-bandgap semiconductorspower electronics (developmental)structural nitride compositesthermal management applicationsadvanced material feasibility studies

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.00118	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaSiN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental