GaSiH is an experimental ceramic compound combining gallium, silicon, and hydrogen—a member of the III-V semiconductor and silicon carbide family of advanced ceramics. This material remains primarily in research phase, where it is being investigated for potential applications requiring high thermal stability, hardness, and semiconductor properties. Its development reflects ongoing efforts to engineer ternary ceramics with tailored mechanical and electronic behavior beyond conventional binary compounds like GaN or SiC.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 50.56 | GPa | — | ||
Poisson's Ratio(ν) | 0.2900 | - | — | ||
Shear Modulus(G) | 29.79 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.772 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2749 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.2728 | eV/atom | — |