Gallium selenide (GaSe) is a layered III-VI semiconductor compound featuring weak van der Waals bonding between atomic layers, making it amenable to mechanical exfoliation into thin sheets. It is primarily investigated in research and emerging device contexts for optoelectronic and photonic applications, where its direct bandgap and nonlinear optical properties offer potential advantages over conventional bulk semiconductors for tunable light emission, detection, and frequency conversion in the visible to near-infrared spectrum.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 33.00 | GPa | — | ||
Exfoliation Energy(Eexf) | 58.42 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2500 | - | — | ||
Shear Modulus(G) | 21.14 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.874 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.000 | eV | — | ||
| ↳ | 0.7250 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 8.610 | - | — | ||
| ↳ | 11.64 | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.1983 | C/m² | — | ||
| ↳ | 0.000 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -111.3 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000600 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.8240 | eV/atom | — | ||
| ↳ | -0.5816 | eV/atom | — |