GaSbO2S

ceramic

· GaSbO2S

GaSbO₂S is a mixed-anion semiconductor ceramic combining gallium, antimony, oxygen, and sulfur elements—a rare quaternary compound belonging to the family of oxychalcogenide semiconductors. This is a research-stage material with potential applications in optoelectronic and photovoltaic devices, where the combination of oxygen and sulfide anions can tailor bandgap and carrier transport properties. The material family is of interest for next-generation solar cells, photodetectors, and wide-bandgap electronics where conventional binary semiconductors (GaAs, GaSb) or ternary compounds may not provide the desired electronic or optical characteristics.

photovoltaic researchphotodetector deviceswide-bandgap semiconductorsoptoelectronic compoundsexperimental thin-film applicationsmaterials research & development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000288	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.8800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GaSbO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental