Gallium sulfide (GaS) is a III-VI semiconductor compound belonging to the family of layered transition metal dichalcogenides and related materials. It exists as a two-dimensional layered crystal structure, making it of significant interest in emerging optoelectronic and nanoelectronic device research. GaS is primarily investigated in academic and advanced materials research contexts rather than established industrial production, with potential applications in next-generation electronics where its direct bandgap and layer-dependent properties could enable novel photodetectors, field-effect transistors, and integrated photonic devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 40.47 | GPa | — | ||
Exfoliation Energy(Eexf) | 56.22 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2400 | - | — | ||
Shear Modulus(G) | 25.58 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.845 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.590 | eV | — | ||
| ↳ | 1.418 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 7.650 | - | — | ||
| ↳ | 10.53 | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -205.2 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -1.084 | eV/atom | — | ||
| ↳ | -0.7069 | eV/atom | — |