GaS — Properties & Data | MatWorld

GaS

Name: GaS
Brand: MatWorld

semiconductor

· GaS

Gallium sulfide (GaS) is a III-VI semiconductor compound belonging to the family of layered transition metal dichalcogenides and related materials. It exists as a two-dimensional layered crystal structure, making it of significant interest in emerging optoelectronic and nanoelectronic device research. GaS is primarily investigated in academic and advanced materials research contexts rather than established industrial production, with potential applications in next-generation electronics where its direct bandgap and layer-dependent properties could enable novel photodetectors, field-effect transistors, and integrated photonic devices.

optoelectronic devicesphotodetectors2D nanomaterial researchfield-effect transistorsintegrated photonicsflexible electronics

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Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	40.47	GPa	DFT · OptB88vdW
Exfoliation Energy(Eexf)	56.22	meV/atom	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2400	-	DFT · OptB88vdW
Shear Modulus(G)	25.58	GPa	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	3.845	kg/m³	DFT · OptB88vdW

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)4 entries	2.590	eV	Measured
↳	1.500	eV	DFT · OptB88vdW
↳	2.450	eV	DFT · TBmBJ
↳	2.350	eV	DFT · HSE06
Dielectric Constant (Relative Permittivity)(εr)2 entries	10.53	-	DFT · OptB88vdW
↳	7.650	-	DFT · PBE
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	7.519	-	DFT · OptB88vdW
↳	5.713	-	DFT · TBmBJ
Electronic Dielectric Tensor(ε∞)	Matrix (redacted)	-	DFT · PBE
Total Dielectric Tensor(ε)	Matrix (redacted)	-	DFT · PBE
Electron Effective Mass(m*e)	0.1867	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	1.607	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.000	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00362	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00192	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-223.2	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	180.5	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	13.64	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Method

Property	Value	Unit	Conditions
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)2 entries	-0.7069	eV/atom	DFT · OptB88vdW
↳	-1.084	eV/atom	Measured

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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GaS

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